Invention Grant
- Patent Title: MEMS capacitive device and method of forming same
- Patent Title (中): MEMS电容器件及其形成方法
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Application No.: US12391083Application Date: 2009-02-23
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Publication No.: US08149564B2Publication Date: 2012-04-03
- Inventor: Lianjun Liu , Melvy F. Miller
- Applicant: Lianjun Liu , Melvy F. Miller
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Meschkow & Gresham, P.L.C.
- Main IPC: H01G5/00
- IPC: H01G5/00 ; H01G7/00
Abstract:
A MEMS capacitive device (90) includes a fixed capacitor plate (104) formed on a surface (102) of a substrate (100). A movable capacitor plate (114) is suspended above the fixed capacitor plate (104) by compliant members (116) anchored to the surface (102). A movable element (120) is positioned in spaced apart relationship from the movable capacitor plate (104) and has an actuator (130) formed thereon. Actuation of the actuator (130) causes abutment of a portion of the movable element (120) against a contact surface (136) of the movable plate (114). The abutment moves the movable plate (114) toward the fixed plate (104) to alter a capacitance (112) between the plates (104, 114). Another substrate (118) may be coupled to the substrate (100) such that a surface (126) of the substrate (118) faces the surface (102) of the substrate (100). The movable element (120) may be formed on the surface (126).
Public/Granted literature
- US20100214716A1 MEMS CAPACITIVE DEVICE AND METHOD OF FORMING SAME Public/Granted day:2010-08-26
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