A memory array having a plurality of memory cells is disclosed, where each memory cell comprises a first inverter having a first transistor coupled between a reference voltage and a first node for receiving input data and a second transistor coupled between the first node and ground; a first inverter comprising a first transistor coupled between a reference voltage and a first node for receiving input data and a second transistor coupled between the first node and ground; a second inverter comprising a third transistor coupled between the reference voltage and a second node for storing inverted input data and a fourth transistor coupled between the second node and ground, the second node being coupled to a control terminal of the second transistor. The memory array further comprises a third inverter and a fourth inverter.