Invention Grant
- Patent Title: Magnetoresistive random access memory element and fabrication method thereof
- Patent Title (中): 磁阻随机存取存储元件及其制造方法
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Application No.: US12750716Application Date: 2010-03-31
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Publication No.: US08149614B2Publication Date: 2012-04-03
- Inventor: Chun-I Hsieh , Chang-Rong Wu
- Applicant: Chun-I Hsieh , Chang-Rong Wu
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer.
Public/Granted literature
- US20110241138A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY ELEMENT AND FABRICATION METHOD THEREOF Public/Granted day:2011-10-06
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