Invention Grant
- Patent Title: Method and apparatus for reducing read disturb in memory
- Patent Title (中): 用于减少存储器中读取干扰的方法和装置
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Application No.: US12878358Application Date: 2010-09-09
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Publication No.: US08149624B1Publication Date: 2012-04-03
- Inventor: Chun-Hsiung Hung , Shuo-Nan Hung , Tseng-Yi Liu
- Applicant: Chun-Hsiung Hung , Shuo-Nan Hung , Tseng-Yi Liu
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Kenta Suzue
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
Various aspects of a NAND memory include have multiple versions of a high threshold voltage distribution—a version with a reduced maximum, and another version. The version with a reduced maximum has a reduced word line pass voltage.
Public/Granted literature
- US20120063232A1 METHOD AND APPARATUS FOR REDUCING READ DISTURB IN MEMORY Public/Granted day:2012-03-15
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