Invention Grant
US08149625B2 Nonvolatile memory device, operating method thereof, and memory system including the same
有权
非易失性存储器件，其操作方法和包括该非易失性存储器件的存储器系统
- Patent Title: Nonvolatile memory device, operating method thereof, and memory system including the same
- Patent Title (中): 非易失性存储器件，其操作方法和包括该非易失性存储器件的存储器系统
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Application No.: US13046838Application Date: 2011-03-14
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Publication No.: US08149625B2Publication Date: 2012-04-03
- Inventor: Sangwon Hwang
- Applicant: Sangwon Hwang
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0090752 20080916
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A nonvolatile memory device includes a memory cell array; a voltage generator configured to provide stepwise increasing step pulses for varying logic states of memory cells in the memory cell array; and control logic configured to adjust an initial voltage of the stepwise increasing step pulses according to the number of the stepwise increasing step pulses.
Public/Granted literature
- US20110164454A1 NONVOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2011-07-07
Information query
