Invention Grant
- Patent Title: Low power memory architecture
- Patent Title (中): 低功耗内存架构
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Application No.: US12470877Application Date: 2009-05-22
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Publication No.: US08149634B2Publication Date: 2012-04-03
- Inventor: Valerie L. Lines
- Applicant: Valerie L. Lines
- Applicant Address: CA Ottawa, Ontario
- Assignee: Mosaid Technologies Incorporated
- Current Assignee: Mosaid Technologies Incorporated
- Current Assignee Address: CA Ottawa, Ontario
- Agency: Borden Ladner Gervais LLP
- Agent Shin Hung
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A memory architecture and circuits for minimizing current leakage in the memory array. Subdivisions of the memory array each have local power grids that can be selectively connected to power supplies, such that only an accessed subdivision will receive power to execute the memory access operation. The memory array can further include databuses which are precharged to one voltage during idle times and a second voltage during active read cycles, which reduces leakage current in datapath circuitry connected to the databuses within the memory array blocks.
Public/Granted literature
- US20090231931A1 LOW POWER MEMORY ARCHITECTURE Public/Granted day:2009-09-17
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