Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12459093Application Date: 2009-06-26
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Publication No.: US08149642B2Publication Date: 2012-04-03
- Inventor: Saeng Hwan Kim
- Applicant: Saeng Hwan Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2009-0011600 20090212
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A semiconductor memory device includes a first power switch for interrupting supply of a first power voltage to a first node in a standby mode, and a second power switch connected between the first node and a second node applied with a second power voltage.
Public/Granted literature
- US20100201411A1 Semiconductor memory device Public/Granted day:2010-08-12
Information query
