Invention Grant
- Patent Title: Semiconductor laser device
- Patent Title (中): 半导体激光器件
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Application No.: US12794965Application Date: 2010-06-07
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Publication No.: US08149889B2Publication Date: 2012-04-03
- Inventor: Chie Fukuda
- Applicant: Chie Fukuda
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2009-195850 20090826
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/04

Abstract:
A semiconductor laser device includes a laser diode provided on a semiconductor substrate, the laser diode including a first optical waveguide having a gain waveguide, a plurality of photodiodes, a first wavelength-selective filter having periodic transmission peaks, and a second wavelength-selective filter having periodic transmission peaks, the period of the transmission peaks of the second wavelength-selective filter being different from the period of the transmission peaks of the first wavelength-selective filter. Furthermore, two photodiodes among the plurality of photodiodes are optically coupled to the first optical waveguide through the first and second wavelength-selective filters, respectively.
Public/Granted literature
- US20110051772A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2011-03-03
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