Invention Grant
- Patent Title: Circuit and method for generating an internal power supply voltage
- Patent Title (中): 用于产生内部电源电压的电路和方法
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Application No.: US11841060Application Date: 2007-08-20
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Publication No.: US08151123B2Publication Date: 2012-04-03
- Inventor: Young-Sun Min
- Applicant: Young-Sun Min
- Applicant Address: KR Suwon-Si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0079224 20060822
- Main IPC: G06F1/26
- IPC: G06F1/26

Abstract:
A circuit and method for generating an internal power supply voltage are disclosed. The circuit includes an internal power supply voltage pre-processing unit configured to generate a first internal power supply voltage in response to an external power supply voltage in a power-up mode and a deep power-down (DPD) exit mode to provide the first internal power supply voltage to an output node, and further configured to define a transition time for the first internal power supply voltage, an internal power supply voltage generating unit configured to generate a stable second internal power supply voltage in response to the external power supply voltage to provide the second internal power supply voltage to the output node, and an initialization signal generating unit configured to generate an internal initialization signal in response to the first internal power supply voltage and the second internal power supply voltage.
Public/Granted literature
- US20080052547A1 CIRCUIT AND METHOD FOR GENERATING AN INTERNAL POWER SUPPLY VOLTAGE Public/Granted day:2008-02-28
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