Invention Grant
US08151442B2 Method of fabricating a magnetoresistive (MR) element having a continuous flux guide defined by the free layer
失效
制造具有由自由层限定的连续通量引导件的磁阻（MR）元件的方法
- Patent Title: Method of fabricating a magnetoresistive (MR) element having a continuous flux guide defined by the free layer
- Patent Title (中): 制造具有由自由层限定的连续通量引导件的磁阻（MR）元件的方法
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Application No.: US12751765Application Date: 2010-03-31
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Publication No.: US08151442B2Publication Date: 2012-04-10
- Inventor: Hardayal S. Gill
- Applicant: Hardayal S. Gill
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Strorage Technologies Netherlands, B.V.
- Current Assignee: Hitachi Global Strorage Technologies Netherlands, B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Duft Bornsen & Fishman, LLP
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00
Abstract:
Magnetoresistive (MR) elements having flux guides defined by the free layer. The MR element includes a free layer, a spacer/barrier layer, a pinned layer, and a pinning layer. A back edge of the free layer (opposite the sensing surface of the MR element) extends past a back edge of the spacer/barrier layer. The portion of the free layer extending past the back edge of the spacer/barrier layer defines a continuous flux guide. The flux guide is processed to reduce the conductive characteristics of the flux guide, thereby reducing current shunt loss in the flux guide.
Public/Granted literature
- US20100187198A1 MAGNETORESISTIVE (MR) ELEMENT HAVING A CONTINUOUS FLUX GUIDE DEFINED BY THE FREE LAYER Public/Granted day:2010-07-29
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