Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12289491Application Date: 2008-10-29
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Publication No.: US08151642B2Publication Date: 2012-04-10
- Inventor: Goro Nakatani
- Applicant: Goro Nakatani
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, PC
- Priority: JP2007-281969 20071030; JP2008-241094 20080919
- Main IPC: G01P3/04
- IPC: G01P3/04

Abstract:
A semiconductor device according to the present invention includes a semiconductor substrate and an MEMS sensor provided on the semiconductor substrate. The MEMS sensor includes a first electrode having a plurality of first interdigital portions aligned in a prescribed direction X at an interval, a second electrode, having a plurality of second interdigital portions aligned in the direction X at an interval, so arranged that the second interdigital portions are opposed to the first interdigital portions in the direction X respectively, a third electrode having a plurality of third interdigital portions aligned in a direction Y orthogonal the direction X at an interval, a fourth electrode, having a plurality of fourth interdigital portions aligned in the direction Y at an interval, so arranged that the fourth interdigital portions are opposed to the third interdigital portions in the direction Y respectively, and a fifth electrode opposed to the first electrode, the second electrode, the third electrode and the fourth electrode in a direction Z orthogonal to the direction X and the direction Y.
Public/Granted literature
- US20090107239A1 Semiconductor device Public/Granted day:2009-04-30
Information query
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