Invention Grant
- Patent Title: Substrate treating method and substrate treating apparatus
- Patent Title (中): 基板处理方法和基板处理装置
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Application No.: US12266069Application Date: 2008-11-06
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Publication No.: US08152598B2Publication Date: 2012-04-10
- Inventor: Dai Fukushima , Atsushi Shigeta
- Applicant: Dai Fukushima , Atsushi Shigeta
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2007-293083 20071112
- Main IPC: B24B41/00
- IPC: B24B41/00

Abstract:
A substrate treating method includes rotating a substrate in a circumferential direction and polishing a peripheral portion of the substrate by pressing a polishing member to it using a pressing mechanism having a pressing pad. An angle of at least a part of the pressing pad with respect to an axial direction, in which the pressing mechanism makes the pressing pad press the peripheral portion of the substrate, is changed by an angle displacement mechanism which actively displaces the angle so that the polishing is performed depending on a surface to be polished in the peripheral portion.
Public/Granted literature
- US20090124174A1 SUBSTRATE TREATING METHOD AND SUBSTRATE TREATING APPARATUS Public/Granted day:2009-05-14
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