Invention Grant
US08153031B2 In-Ga-Zn-Sn type oxide sinter and target for physical film deposition
有权
In-Ga-Zn-Sn型氧化物烧结体和物理膜沉积靶
- Patent Title: In-Ga-Zn-Sn type oxide sinter and target for physical film deposition
- Patent Title (中): In-Ga-Zn-Sn型氧化物烧结体和物理膜沉积靶
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Application No.: US12599548Application Date: 2007-11-30
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Publication No.: US08153031B2Publication Date: 2012-04-10
- Inventor: Koki Yano , Kazuyoshi Inoue
- Applicant: Koki Yano , Kazuyoshi Inoue
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: JP2007-126525 20070511
- International Application: PCT/JP2007/073135 WO 20071130
- International Announcement: WO2008/139654 WO 20081120
- Main IPC: H01B1/02
- IPC: H01B1/02
Abstract:
An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga2In6Sn2O16 or (Ga,In)2O3.
Public/Granted literature
- US20110260118A1 IN-GA-ZN-SN TYPE OXIDE SINTER AND TARGET FOR PHYSICAL FILM DEPOSITION Public/Granted day:2011-10-27
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