Invention Grant
- Patent Title: Manufacturing method of a semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12453451Application Date: 2009-05-12
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Publication No.: US08153448B2Publication Date: 2012-04-10
- Inventor: Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
- Applicant: Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2002-316733 20021030
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
Public/Granted literature
- US20090280577A1 Manufacturing method of a semiconductor device Public/Granted day:2009-11-12
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