Invention Grant
US08153454B2 Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate
失效
通过加热衬底制造的半导体器件的制造装置和制造方法
- Patent Title: Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate
- Patent Title (中): 通过加热衬底制造的半导体器件的制造装置和制造方法
-
Application No.: US12209397Application Date: 2008-09-12
-
Publication No.: US08153454B2Publication Date: 2012-04-10
- Inventor: Masaki Ueno , Toshio Ueda , Yoko Watanabe
- Applicant: Masaki Ueno , Toshio Ueda , Yoko Watanabe
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2007-239262 20070914
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A fabrication apparatus and fabrication method of a semiconductor device are provided, allowing the temperature distribution of a substrate to be rendered uniform. The fabrication apparatus for a semiconductor device includes a susceptor holding the substrate, a heater arranged at a back side of the susceptor, a support member located between the substrate and susceptor, including a support portion, and a spacer located between the susceptor and support member. The spacer has an opening formed corresponding to the site where said support portion is located, at an opposite face side of the support member.
Public/Granted literature
- US20090075409A1 FABRICATION APPARATUS AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE PRODUCED BY HEATING SUBSTRATE Public/Granted day:2009-03-19
Information query
IPC分类:
