Method for fabricating memory

Invention Grant

US08153485B2 Method for fabricating memory 有权

Title translation: 制造记忆的方法

Please log in to see more content

Patent Title: Method for fabricating memory
Patent Title (中): 制造记忆的方法
Application No.: US13163769

Application Date: 2011-06-20
Publication No.: US08153485B2

Publication Date: 2012-04-10
Inventor: Erh-Kun Lai , Chia-Hua Ho , Kuang-Yeu Hsieh
Applicant: Erh-Kun Lai , Chia-Hua Ho , Kuang-Yeu Hsieh
Applicant Address: TW Hsinchu
Assignee: MACRONIX International Co., Ltd.
Current Assignee: MACRONIX International Co., Ltd.
Current Assignee Address: TW Hsinchu
Agency: Jianq Chyun IP Office
Main IPC: H01L21/8238
IPC: H01L21/8238

Abstract:

A method for fabricating a memory is described. Word lines are provided in a first direction. Bit lines are provided in a second direction. A top electrode is formed connecting to a corresponding word line. A bottom electrode is formed connecting to a corresponding bit line. A resistive layer is formed on the bottom electrode. At least two separate L-shaped liners are formed, wherein each L-shaped liner has variable resistive materials on both ends of the L-shaped liner and each L-shaped liner is coupled between the top electrode and the resistive layer.

Abstract(Chinese):

描述了一种制造存储器的方法。字线在第一方向上提供。位线沿第二方向设置。形成连接到相应字线的顶部电极。形成连接到相应位线的底部电极。电阻层形成在底部电极上。形成至少两个单独的L形衬垫，其中每个L形衬垫在L形衬套的两端具有可变电阻材料，并且每个L形衬垫耦合在顶部电极和电阻层之间。

Public/Granted literature

US20110250729A1 METHOD FOR FABRICATING MEMORY Public/Granted day:2011-10-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS