Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12659482Application Date: 2010-03-10
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Publication No.: US08153487B2Publication Date: 2012-04-10
- Inventor: Wakako Takeuchi , Hiroshi Akahori , Murato Kawai
- Applicant: Wakako Takeuchi , Hiroshi Akahori , Murato Kawai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2006-023851 20060131
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/4763 ; H01L21/44
Abstract:
A semiconductor device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a second insulating film comprising a plurality of insulating films provided on the charge storage layer and comprising a nitride film as an uppermost layer, and a single-layer control gate electrode provided on the second insulating film and comprising metal silicide.
Public/Granted literature
- US20100184275A1 Semiconductor device and method for manufacturing the same Public/Granted day:2010-07-22
Information query
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