Invention Grant
- Patent Title: Method of fabricating an epitaxially grown layer on a composite structure
- Patent Title (中): 在复合结构上制造外延生长层的方法
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Application No.: US12663696Application Date: 2009-01-06
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Publication No.: US08153500B2Publication Date: 2012-04-10
- Inventor: Bruce Faure , Alexandra Marcovecchio
- Applicant: Bruce Faure , Alexandra Marcovecchio
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0850362 20080121
- International Application: PCT/EP2009/050086 WO 20090106
- International Announcement: WO2009/092624 WO 20090730
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method of fabricating materials by epitaxy by epitaxially growing at least one layer of a material upon a composite structure that has at least one thin film bonded to a support substrate and a bonding layer of oxide formed by deposition between the support substrate and the thin film. The thin film and the support substrate have a mean thermal expansion coefficient of 7×10−6 K−1 or more. The bonding layer is formed by low pressure chemical vapor deposition (LPCVD) of a layer of silicon oxide on the bonding face of the support substrate or on the bonding face of the thin film. The thin film has a thickness of 5 micrometers or less while the thickness of the layer of oxide is equal to or greater than the thickness of the thin film. The method also includes a heat treatment carried out at a temperature that is higher than the temperature for deposition of the layer of oxide of silicon and for a predetermined period.
Public/Granted literature
- US20100178749A1 METHOD OF FABRICATING EPITAXIALLY GROWN LAYERS ON A COMPOSITE STRUCTURE Public/Granted day:2010-07-15
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