A semiconductor device, comprising a silicon layer, an n-type field-effect transistor (NFET) disposed in and on a silicon layer, and a p-type field-effect transistor (PFET) disposed in and on the silicon layer, wherein the PFET includes a boron-doped silicon-germanium layer disposed on the silicon layer. Also, a method for manufacturing a semiconductor device, comprising forming a first conductive layer over a p-well of a silicon layer, forming a second conductive layer over an n-well of the silicon layer, implanting fluorine ions into both the p-well and the n-well, exposing both the p-well and the n-well to ammonium hydroxide and peroxide, and epitaxially growing a boron-doped silicon-germanium layer on the silicon layer.