A method of manufacturing an array type semiconductor laser device. The method includes forming first and second electrodes on lower and upper surfaces of a wafer comprising a plurality of semiconductor laser arrays having a plurality of laser emission regions, and forming a metal bonding layer on the second electrode of the wafer. The method also includes dicing the wafer into the semiconductor laser arrays and mounting each of the individually separated semiconductor laser arrays on a base with the surface of the metal bonding layer in contact with the base. The method further includes melting the metal bonding layer to fix the mounted semiconductor laser array on the base.