Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11420889Application Date: 2006-05-30
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Publication No.: US08153511B2Publication Date: 2012-04-10
- Inventor: Daiki Yamada , Naoto Kusumoto
- Applicant: Daiki Yamada , Naoto Kusumoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2005-156583 20050530
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
It is an object to improve a yield of a step of cutting off a substrate. A substrate is cut off by using an ablation process. An ablation process uses a phenomenon in which a molecular bond in a portion irradiated with a laser beam, that is, a portion which absorbs the laser beam is cut off, photodegraded, and evaporated. In other words, a substrate is irradiated with a laser beam, a molecular bond in a portion of the substrate is cut off, photodegraded, and evaporated; accordingly, a groove is formed in the substrate. A method for cutting the substrate has steps of selectively emitting a laser beam and forming a groove in the substrate, and selectively emitting a laser beam to the groove and cutting off the substrate. Methods for manufacturing a groove in a substrate and cutting off a substrate are used for manufacturing a semiconductor device.
Public/Granted literature
- US20060270195A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2006-11-30
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