Invention Grant
- Patent Title: Method and system for continuous large-area scanning implantation process
- Patent Title (中): 连续大面积扫描植入法的方法与系统
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Application No.: US11782289Application Date: 2007-07-24
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Publication No.: US08153513B2Publication Date: 2012-04-10
- Inventor: Francois J. Henley
- Applicant: Francois J. Henley
- Applicant Address: US CA San Jose
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend and Stockton LLP
- Main IPC: H01L21/425
- IPC: H01L21/425

Abstract:
A method for manufacturing doped substrates using a continuous large area scanning implantation process is disclosed. In one embodiment, the method includes providing a movable track member. The movable track member is provided in a chamber. The chamber includes an inlet and an outlet. In a specific embodiment, the movable track member can include one or more rollers, air bearings, belt member, and/or movable beam member to provide one or more substrates for a scanning process. The method may also include providing a first substrate. The first substrate includes a first plurality of tiles. The method maintains the first substrate including the first plurality of tiles in a vacuum. The method includes transferring the first substrate including the first plurality of tiles from the inlet port onto the movable track member. The first plurality of tiles are subjected to a scanning implant process. The method also includes maintaining a second substrate including a second plurality of tiles in the vacuum. The method includes transferring the second substrate including a second plurality of tiles from the inlet port onto the movable track member. The method includes subjecting the second plurality of tiles to an implant process using the scanning implant process.
Public/Granted literature
- US20080038908A1 METHOD AND SYSTEM FOR CONTINUOUS LARGE-AREA SCANNING IMPLANTATION PROCESS Public/Granted day:2008-02-14
Information query
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