Invention Grant
- Patent Title: Polishing method, polishing apparatus, and method for manufacturing semiconductor device
- Patent Title (中): 抛光方法，抛光装置以及半导体装置的制造方法
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Application No.: US12055753Application Date: 2008-03-26
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Publication No.: US08153525B2Publication Date: 2012-04-10
- Inventor: Naoki Idani
- Applicant: Naoki Idani
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-085038 20070328
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A polishing method includes a first polishing step of halfway polishing a film to be polished formed on a substrate, and a second polishing step of further polishing the polished film, wherein a first film thickness profile showing an in-plane distribution of a film thickness of the polished film after the second polishing step for a first substrate is measured, and the first polishing step for a second substrate is executed to obtain a second film thickness profile which has a size relation in a film thickness opposite to the first film thickness profile.
Public/Granted literature
- US20080242081A1 POLISHING METHOD, POLISHING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-10-02
Information query
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