Method for reducing sidewall etch residue

Invention Grant

US08153527B2 Method for reducing sidewall etch residue 有权

Title translation: 减少侧壁蚀刻残留的方法

Please log in to see more content

Patent Title: Method for reducing sidewall etch residue
Patent Title (中): 减少侧壁蚀刻残留的方法
Application No.: US12249970

Application Date: 2008-10-13
Publication No.: US08153527B2

Publication Date: 2012-04-10
Inventor: Soon Yoong Loh , Carol Goh , Kin Wai Tang , Kim Foong Kong
Applicant: Soon Yoong Loh , Carol Goh , Kin Wai Tang , Kim Foong Kong
Applicant Address: SG Singapore
Assignee: Globalfoundries Singapore Pte. Ltd.
Current Assignee: Globalfoundries Singapore Pte. Ltd.
Current Assignee Address: SG Singapore
Agency: Horizon IP Pte Ltd
Main IPC: H01L21/311
IPC: H01L21/311

Method for reducing sidewall etch residue

Abstract:

A method for fabricating a semiconductor device is provided. The method comprising forming a first layer over a substrate and a second layer over the first layer. A patterned masking layer is subsequently provided over the second layer and a patterned second layer with outwardly tapered sidewalls is formed by isotropically etching exposed portions of the second layer. A patterned first layer is the formed by etching the first layer in accordance with the patterned second layer.

Abstract(Chinese):

提供一种制造半导体器件的方法。该方法包括在衬底上形成第一层，在第一层上形成第二层。随后在第二层上提供图案化掩模层，并且通过各向同性蚀刻第二层的暴露部分形成具有向外锥形侧壁的图案化第二层。通过根据图案化的第二层蚀刻第一层而形成图案化的第一层。

Public/Granted literature

US20100091424A1 METHOD FOR REDUCING SIDEWALL ETCH RESIDUE Public/Granted day:2010-04-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀