Invention Grant
US08153529B2 Method for selective deposition and devices 有权
选择性沉积和器件的方法

  • Patent Title: Method for selective deposition and devices
  • Patent Title (中): 选择性沉积和器件的方法
  • Application No.: US12622506
    Application Date: 2009-11-20
  • Publication No.: US08153529B2
    Publication Date: 2012-04-10
  • Inventor: David H. Levy
  • Applicant: David H. Levy
  • Applicant Address: US NY Rochester
  • Assignee: Eastman Kodak Company
  • Current Assignee: Eastman Kodak Company
  • Current Assignee Address: US NY Rochester
  • Agent J. Lanny Tucker
  • Main IPC: H01L21/302
  • IPC: H01L21/302
Method for selective deposition and devices
Abstract:
A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least 90% of the acid groups are neutralized. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
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