Invention Grant
US08153832B2 Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof
有权
包含化合物的pentakis（二甲基氨基）乙硅烷前体及其制备方法
- Patent Title: Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof
- Patent Title (中): 包含化合物的pentakis（二甲基氨基）乙硅烷前体及其制备方法
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Application No.: US12295902Application Date: 2006-04-03
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Publication No.: US08153832B2Publication Date: 2012-04-10
- Inventor: Christian Dussarrat
- Applicant: Christian Dussarrat
- Applicant Address: FR Paris
- Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney
- International Application: PCT/EP2006/061283 WO 20060403
- International Announcement: WO2007/112779 WO 20071011
- Main IPC: C07F7/10
- IPC: C07F7/10 ; C07F7/12
Abstract:
Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.
Public/Granted literature
- US20100016620A1 PENTAKIS(DIMETHYLAMINO) DISILANE PRECURSOR COMPRISING COMPOUND AND METHOD FOR THE PREPARATION THEREOF Public/Granted day:2010-01-21
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