Invention Grant
- Patent Title: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
- Patent Title (中): 含硅膜，例如硅，氮化硅，二氧化硅和/或硅氧氮化物的薄膜的低温沉积的组成和方法
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Application No.: US13069217Application Date: 2011-03-22
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Publication No.: US08153833B2Publication Date: 2012-04-10
- Inventor: Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
- Applicant: Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Hultquist, PLLC
- Agent Mary B. Grant; Margaret Chappuis
- Main IPC: C07C7/10
- IPC: C07C7/10
Abstract:
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
Public/Granted literature
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