Invention Grant
- Patent Title: Method and structure for hydrogenation of silicon substrates with shaped covers
- Patent Title (中): 具有成型盖的硅基板的氢化方法和结构
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Application No.: US11852856Application Date: 2007-09-10
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Publication No.: US08153887B2Publication Date: 2012-04-10
- Inventor: Yick Chuen Chan , Pui Yee Joan Ho , Nathan W. Cheung , Man Wong , Chung Chan
- Applicant: Yick Chuen Chan , Pui Yee Joan Ho , Nathan W. Cheung , Man Wong , Chung Chan
- Applicant Address: HK Kowloon
- Assignee: Silicon China (HK) Ltd.
- Current Assignee: Silicon China (HK) Ltd.
- Current Assignee Address: HK Kowloon
- Agency: Ella Cheong HK Ltd.
- Agent Margaret Burke; Sam Yip
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00

Abstract:
Method and structure for hydrogenation of silicon substrates with shaped covers. According to an embodiment, the present invention provides a method for fabricating a photovoltaic material. The method includes providing a semiconductor substrate. The method also includes forming a crystalline material characterized by a plurality of worm hole structures therein overlying the semiconductor substrate. The worm hole structures are characterized by a density distribution from a surface region of the crystalline material to a defined depth within a z-direction of the surface region to form a thickness of material to be detached. The method further includes providing a glue layer overlying a surface region of the crystalline material. The method includes joining the surface region of the crystalline material via the glue layer to a support substrate.
Public/Granted literature
- US20080092948A1 METHOD AND STRUCTURE FOR HYDROGENATION OF SILICON SUBSTRATES WITH SHAPED COVERS Public/Granted day:2008-04-24
Information query
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