Invention Grant
- Patent Title: Low area screen printed metal contact structure and method
- Patent Title (中): 低面积丝网印刷金属接触结构及方法
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Application No.: US12125817Application Date: 2008-05-22
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Publication No.: US08153890B2Publication Date: 2012-04-10
- Inventor: Stuart Ross Wenham , Ly Mai , Zhengrong Shi , JingJia Ji
- Applicant: Stuart Ross Wenham , Ly Mai , Zhengrong Shi , JingJia Ji
- Applicant Address: AU New South Wales CN Wuxi
- Assignee: NewSouth Innovations Pty Ltd.,Suntech Power Co. Ltd.
- Current Assignee: NewSouth Innovations Pty Ltd.,Suntech Power Co. Ltd.
- Current Assignee Address: AU New South Wales CN Wuxi
- Agency: Vedder Price P.C.
- Agent Thomas J. Kowalski; Deborah L. Lu
- Priority: AU2005906552 20051124; AU2005906662 20051129
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00

Abstract:
A solar cell comprises adjacent regions of oppositely doped semiconductor material forming a pn junction substantially parallel to front and rear surfaces of the solar cell. A surface of the semiconductor material has a plurality of depressions, with semiconductor material regions forming internal wall surface regions of the depressions being doped to the polarity of one of the semiconductor regions, with which they are in electrical communication. The wall surface regions of the depressions are isolated from the other oppositely doped semiconductor region and form contact points for a contact structure contacting the surface in which the depressions are formed. A dielectric layer is formed over the surface, the dielectric layer being thinner or non-existent in at least a portion of each depression, such that a screen printed metal contact structure formed over the dielectric layer and extending into the depressions makes contact with the semiconductor material in the depressions after sintering.
Public/Granted literature
- US20090007962A1 LOW AREA SCREEN PRINTED METAL CONTACT STRUCTURE AND METHOD Public/Granted day:2009-01-08
Information query
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