Invention Grant
- Patent Title: Internal light trapping method and structure using porous monocyrstalline silicon films for photovoltaic applications
- Patent Title (中): 用于光伏应用的多孔单晶硅膜的内部光捕获方法和结构
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Application No.: US12196244Application Date: 2008-08-21
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Publication No.: US08153892B2Publication Date: 2012-04-10
- Inventor: Yick Chuen Chan , Nathan W. Cheung , Chung Chan
- Applicant: Yick Chuen Chan , Nathan W. Cheung , Chung Chan
- Applicant Address: HK Kowloon
- Assignee: Silicon China (HK) Ltd.
- Current Assignee: Silicon China (HK) Ltd.
- Current Assignee Address: HK Kowloon
- Agency: Ella Cheong HK Ltd.
- Agent Margaret Burke; Sam Yip
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
A thin photovoltaic device for solar cell applications. As used herein, the term “thin” generally means less than about 20 microns of silicon crystal material, but can also be other dimensions. The term thin should not be limited and should be construed broadly and consistently as one of ordinary skill in the art. In a specific embodiment, the device has a support substrate having a surface region. The device has a thickness of photovoltaic material overlying the surface region of support substrate and having a predefined surface texture to facilitate trapping of one or more incident photons using at least a refraction process to cause the one or more photons to traverse a longer optical path within an inner region of the thickness of material according to a specific embodiment. In a specific embodiment the longer optical path is provided relative to a shorter optical path characteristic of a surface region without the predefined surface roughness. In a specific embodiment, the device also has a dimension of about one wavelength of visible light to about two microns characterizing the thickness of the photovoltaic material.
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