An apparatus and method for synthesizing nanostructures in a reactor having a reaction zone and a conductive susceptor positioned in the reaction zone. In one embodiment, the method has the steps of placing a semiconductor plate having a film of a catalyst in the reaction zone such that the semiconductor plate is supported by the conductive susceptor; transporting a gas mixture having a feedstock gas having hydrocarbon and a carrier gas into the reaction zone of the chamber; inductively heating the reaction zone; and regulating the heating so that the temperature of the conductive susceptor increases from a first temperature to a second temperature when the gas mixture is introduced into the cavity of the chamber to allow nanostructures to be grown from the interaction of the gas mixture with the film of a catalyst of the semiconductor plate.