Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12266266Application Date: 2008-11-06
-
Publication No.: US08153946B2Publication Date: 2012-04-10
- Inventor: Yoshiaki Toyoshima
- Applicant: Yoshiaki Toyoshima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2007-288963 20071106
- Main IPC: H01L27/00
- IPC: H01L27/00

Abstract:
A semiconductor device includes a light-receiving element which is connected to a negative power supply and generates conductive carriers by receiving light, an amplifier transistor which is a depletion transistor and amplifies an electrical signal obtained by the conductive carriers, and a transfer gate transistor which is a depletion transistor and is controlled by a negative potential applied to a gate to electrically connect or disconnect the light-receiving element and the amplifier transistor.
Public/Granted literature
- US20090128224A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-05-21
Information query
IPC分类: