Invention Grant
- Patent Title: Silicon-quantum-dot semiconductor near-infrared photodetector
- Patent Title (中): 硅量子点半导体近红外光电探测器
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Application No.: US12702451Application Date: 2010-02-09
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Publication No.: US08154007B2Publication Date: 2012-04-10
- Inventor: Jia-Min Shieh , Wen-Chein Yu , Chao-Kei Wang , Bau-Tong Dai , Ci-Ling Pan , Hao-Chung Kuo , Jung-Y. Huang
- Applicant: Jia-Min Shieh , Wen-Chein Yu , Chao-Kei Wang , Bau-Tong Dai , Ci-Ling Pan , Hao-Chung Kuo , Jung-Y. Huang
- Applicant Address: TW Hsinchu
- Assignee: National Applied Research Laboratories
- Current Assignee: National Applied Research Laboratories
- Current Assignee Address: TW Hsinchu
- Agency: Jackson IPG PLLC
- Agent Demian K. Jackson
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot structure is obtained with excellent near-infrared optoelectronic response.
Public/Granted literature
- US20100213440A1 Silicon-Quantum-Dot Semiconductor Near-Infrared Photodetector Public/Granted day:2010-08-26
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