Invention Grant
US08154018B2 Semiconductor device, its manufacture method and template substrate
有权
半导体器件，其制造方法和模板基板
- Patent Title: Semiconductor device, its manufacture method and template substrate
- Patent Title (中): 半导体器件，其制造方法和模板基板
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Application No.: US12950817Application Date: 2010-11-19
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Publication No.: US08154018B2Publication Date: 2012-04-10
- Inventor: Hiroyuki Kato , Michihiro Sano
- Applicant: Hiroyuki Kato , Michihiro Sano
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick, PC
- Priority: JP2007-087127 20070329
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer.
Public/Granted literature
- US20110073857A1 SEMICONDUCTOR DEVICE, ITS MANUFACTURE METHOD AND TEMPLATE SUBSTRATE Public/Granted day:2011-03-31
Information query
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