Invention Grant
- Patent Title: Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate
- Patent Title (中): 碳化硅衬底，外延晶片和碳化硅衬底的制造方法
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Application No.: US12685967Application Date: 2010-01-12
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Publication No.: US08154027B2Publication Date: 2012-04-10
- Inventor: Makoto Sasaki , Shin Harada
- Applicant: Makoto Sasaki , Shin Harada
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2009-004839 20090113
- Main IPC: H01L29/24
- IPC: H01L29/24
Abstract:
An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.
Public/Granted literature
- US20100176403A1 SILICON CARBIDE SUBSTRATE, EPITAXIAL WAFER AND MANUFACTURING METHOD OF SILICON CARBIDE SUBSTRATE Public/Granted day:2010-07-15
Information query
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