Invention Grant
- Patent Title: Nitride semiconductor light emitting element
- Patent Title (中): 氮化物半导体发光元件
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Application No.: US12642205Application Date: 2009-12-18
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Publication No.: US08154035B2Publication Date: 2012-04-10
- Inventor: Mayuko Fudeta
- Applicant: Mayuko Fudeta
- Applicant Address: JP Osaka-shi
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka-shi
- Agency: Morrison & Foerster LLP
- Priority: JP2008-332308 20081226; JP2009-241053 20091020
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L21/00
Abstract:
In a nitride semiconductor light emitting element, a light transmitting substrate has an upper surface on which a nitride semiconductor layer including at least a light emitting layer is formed. On the upper surface of the light transmitting substrate, recess regions and rise regions are formed. One of each of the recess regions and each of the rise regions is formed by a polygon having at least one apex having an interior angle of 180° or greater when viewed in a planar view. The other of each of the recess regions and each of the rise regions is formed not to be connected to one another in a straight line when viewed in a planar view. A nitride semiconductor light emitting element having such a configuration has excellent light extraction efficiency and can be manufactured at a moderate cost.
Public/Granted literature
- US20100163901A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2010-07-01
Information query
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