Invention Grant
US08154051B2 MOS transistor with in-channel and laterally positioned stressors
有权
MOS晶体管具有通道内和侧向定位的应力源
- Patent Title: MOS transistor with in-channel and laterally positioned stressors
- Patent Title (中): MOS晶体管具有通道内和侧向定位的应力源
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Application No.: US11511622Application Date: 2006-08-29
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Publication No.: US08154051B2Publication Date: 2012-04-10
- Inventor: Chih-Hao Wang , Ching-Wei Tsai , Ta-Wei Wang
- Applicant: Chih-Hao Wang , Ching-Wei Tsai , Ta-Wei Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A strained channel transistor can be provided by combining a stressor positioned in the channel region with stressors positioned on opposite sides of the channel region. This produces increased strain in the channel region, resulting in correspondingly enhanced transistor performance.
Public/Granted literature
- US20080054301A1 MOS transistor with in-channel and laterally positioned stressors Public/Granted day:2008-03-06
Information query
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