Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12910150Application Date: 2010-10-22
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Publication No.: US08154059B2Publication Date: 2012-04-10
- Inventor: Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
- Applicant: Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP11-076992 19990323
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L21/00 ; H01L21/338 ; H01L21/31
Abstract:
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
Public/Granted literature
- US20110034215A1 Semiconductor Device and Method for Manufacturing the Same Public/Granted day:2011-02-10
Information query
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