Invention Grant
- Patent Title: Ultrafast and ultrasensitive novel photodetectors
- Patent Title (中): 超快超新型光电探测器
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Application No.: US12715783Application Date: 2010-03-02
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Publication No.: US08154063B2Publication Date: 2012-04-10
- Inventor: Jin Young Kim , Ramses Martinez , Francesco Stellacci , Javier Martinez , Ricardo Garcia
- Applicant: Jin Young Kim , Ramses Martinez , Francesco Stellacci , Javier Martinez , Ricardo Garcia
- Applicant Address: US MA Cambridge ES Madrid
- Assignee: Massachusetts Institute of Technology,Consejo Superior de Investigaciones Cientificas
- Current Assignee: Massachusetts Institute of Technology,Consejo Superior de Investigaciones Cientificas
- Current Assignee Address: US MA Cambridge ES Madrid
- Agency: Gesmer Updegrove LLP
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113
Abstract:
A photodetector is provided that includes a FET structure with a channel structure having one or more nanowire structures. Noble metal nanoparticles are positioned on the channel structure so as to produce a functionalized channel structure. The functionalized channel structure exhibits pronounced surface plasmon resonance (SPR) absorption near the SPR frequency of the noble metal nanoparticles.
Public/Granted literature
- US20110215298A1 ULTRAFAST AND ULTRASENSITIVE NOVEL PHOTODETECTORS Public/Granted day:2011-09-08
Information query
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