Invention Grant
- Patent Title: Titanium aluminum oxide films
- Patent Title (中): 钛氧化铝薄膜
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Application No.: US11566042Application Date: 2006-12-01
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Publication No.: US08154066B2Publication Date: 2012-04-10
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg, & Woessner, P.A.
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
A dielectric layer containing an insulating metal oxide film having multiple metal components and a method of fabricating such a dielectric layer produce a reliable dielectric layer for use in a variety of electronic devices. Embodiments include a titanium aluminum oxide film structured as one or more monolayers. Embodiments also include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a titanium aluminum oxide film.
Public/Granted literature
- US20070090441A1 TITANIUM ALUMINUM OXIDE FILMS Public/Granted day:2007-04-26
Information query
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