Invention Grant
- Patent Title: Semiconductor memory device and method of manufacturing the same
- Patent Title (中): 半导体存储器件及其制造方法
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Application No.: US11987845Application Date: 2007-12-05
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Publication No.: US08154070B2Publication Date: 2012-04-10
- Inventor: Toshikazu Mizukoshi
- Applicant: Toshikazu Mizukoshi
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2006-352248 20061227
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/792
Abstract:
A nonvolatile memory includes a semiconductor substrate having a body member and a step member formed on the body member, a highly doped first well layer formed on the step member, a control electrode formed on the step member, a first and a second diffusion layers in the substrate, lightly doped second well layers formed on the main surface of the substrate between the first or the second diffusion layer and the first well layer, and a first and a second charge-storage multi-layers sandwiching the step member and the control electrode, each of the first and the second charge-storage multi-layers including a bottom oxide layer, a charge-storage film, a top oxide layer and a floating electrode which are formed in that order.
Public/Granted literature
- US20080157168A1 Semiconductor memory device and method of manufacturing the same Public/Granted day:2008-07-03
Information query
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