Invention Grant
- Patent Title: Semiconductor device and fabrication method of the semiconductor device
- Patent Title (中): 半导体器件的半导体器件和制造方法
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Application No.: US12300795Application Date: 2007-11-28
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Publication No.: US08154079B2Publication Date: 2012-04-10
- Inventor: Keiichi Matsushita , Kazutaka Takagi , Naotaka Tomita
- Applicant: Keiichi Matsushita , Kazutaka Takagi , Naotaka Tomita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-330337 20061207; JP2006-338609 20061215
- International Application: PCT/JP2007/072953 WO 20071128
- International Announcement: WO2008/069074 WO 20080612
- Main IPC: H01L31/113
- IPC: H01L31/113
Abstract:
A semiconductor device, which can prevent an element breakdown by alleviating of electric field concentrations, and can also prevent reduction of gain, includes: a source electrode formed on a semiconductor layer; a drain electrode formed on the semiconductor layer; a gate electrode formed between the source electrode and the drain electrode; an insulating film formed on the semiconductor layer and the gate electrode; a field plate electrode formed on the insulating film; and a resistor for connecting the field plate electrode and the source electrode.
Public/Granted literature
- US20090256210A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SEMICONDUCTOR DEVICE Public/Granted day:2009-10-15
Information query
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