Invention Grant
- Patent Title: Dielectric structure having lower-k and higher-k materials
- Patent Title (中): 介电结构具有较低的k和较高的k材料
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Application No.: US12328849Application Date: 2008-12-05
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Publication No.: US08154080B2Publication Date: 2012-04-10
- Inventor: Yiliang Wu , Paul F Smith
- Applicant: Yiliang Wu , Paul F Smith
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Fay Sharpe LLP
- Agent Zosan S. Soong
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
An electronic device including in any sequence: (a) a semiconductor layer; and (b) a dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a lower concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.
Public/Granted literature
- US20100140705A1 DIELECTRIC STRUCTURE HAVING LOWER-K AND HIGHER-K MATERIALS Public/Granted day:2010-06-10
Information query
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