Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12694592Application Date: 2010-01-27
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Publication No.: US08154082B2Publication Date: 2012-04-10
- Inventor: Yoshihiko Moriyama , Yoshiki Kamata , Tsutomu Tezuka
- Applicant: Yoshihiko Moriyama , Yoshiki Kamata , Tsutomu Tezuka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-018492 20090129
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/336
Abstract:
A semiconductor device includes an NMISFET region. The NMISFET region includes a Ge nano wire having a triangular cross section along a direction perpendicular to a channel current direction, wherein two of surfaces that define the triangular cross section of the Ge nano wire are (111) planes, and the other surface that define the triangular cross section of the Ge nano wire is a (100) plane; and an Si layer or an Si1-xGex layer (0
Public/Granted literature
- US20100187503A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-07-29
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