Invention Grant
- Patent Title: Semiconductor device formed on high-resistance substrate
- Patent Title (中): 半导体器件形成在高电阻基板上
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Application No.: US13010786Application Date: 2011-01-21
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Publication No.: US08154083B2Publication Date: 2012-04-10
- Inventor: Young Jin Park
- Applicant: Young Jin Park
- Applicant Address: KR
- Assignee: Petari Incorporation
- Current Assignee: Petari Incorporation
- Current Assignee Address: KR
- Agency: Horizon IP Pte Ltd
- Priority: KR10-2007-0070527 20070713
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
The present invention relates to a semiconductor device and a method of manufacturing the same. A high-resistance silicon wafer is manufactured in such a manner that a large-sized silicon wafer manufactured by the Czochralski method is irradiated with neutrons, and high-resistance and low-resistance elements are simultaneously formed on the high-resistance silicon wafer. Thus, the manufacturing cost can be remarkably saved, and the reliability of products can be enhanced.
Public/Granted literature
- US20110175194A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-07-21
Information query
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