Invention Grant
- Patent Title: Integrated electronic circuit including a thin film portion based on hafnium oxide
- Patent Title (中): 集成电子电路，包括基于氧化铪的薄膜部分
-
Application No.: US12597738Application Date: 2008-04-25
-
Publication No.: US08154091B2Publication Date: 2012-04-10
- Inventor: Catherine Dubourdieu , Erwan Yann Rauwel , Vincent Cosnier , Sandrine Lhostis , Daniel-Camille Bensahel
- Applicant: Catherine Dubourdieu , Erwan Yann Rauwel , Vincent Cosnier , Sandrine Lhostis , Daniel-Camille Bensahel
- Applicant Address: FR Paris Cedex FR Grenoble Cedex
- Assignee: Centre National de la Recherche Scientifique-CNRS,Institut National Polytechnique de Grenoble
- Current Assignee: Centre National de la Recherche Scientifique-CNRS,Institut National Polytechnique de Grenoble
- Current Assignee Address: FR Paris Cedex FR Grenoble Cedex
- Agency: Gardere Wynne Sewell LLP
- Priority: FR0703089 20070427
- International Application: PCT/FR2008/050753 WO 20080425
- International Announcement: WO2008/155490 WO 20081224
- Main IPC: H01L31/119
- IPC: H01L31/119
Abstract:
An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.
Public/Granted literature
- US20100059834A1 INTEGRATED ELECTRONIC CIRCUIT INCLUDING A THIN FILM PORTION BASED ON HAFNIUM OXIDE Public/Granted day:2010-03-11
Information query
IPC分类:
