Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12972243Application Date: 2010-12-17
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Publication No.: US08154103B2Publication Date: 2012-04-10
- Inventor: Hiroyasu Tanaka , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh , Yoshiaki Fukuzumi , Masaru Kito , Yasuyuki Matsuoka
- Applicant: Hiroyasu Tanaka , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh , Yoshiaki Fukuzumi , Masaru Kito , Yasuyuki Matsuoka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Tohiba
- Current Assignee: Kabushiki Kaisha Tohiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/76
Abstract:
A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void, a gate insulating film surrounding the body section, and formed between the body section and the gate electrode, and a drain region connected with the body section.
Public/Granted literature
- US20110084331A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-04-14
Information query
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