Invention Grant
- Patent Title: Charge pump circuits, systems, and operational methods thereof
- Patent Title (中): 电荷泵电路,系统及其操作方法
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Application No.: US12751182Application Date: 2010-03-31
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Publication No.: US08154333B2Publication Date: 2012-04-10
- Inventor: Ming-Dou Ker , Yi-Hsin Weng
- Applicant: Ming-Dou Ker , Yi-Hsin Weng
- Applicant Address: TW Taiwan
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Taiwan
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A charge pump circuit includes at least one stage between an input end and an output end. The at least one stage includes a first CMOS transistor coupled with a first capacitor and a second CMOS transistor coupled with a second capacitor. The at least one stage is capable of receiving a first timing signal and a second timing signal for pumping an input voltage at the input end to an output voltage at the output end. During a transitional period of the first timing signal and the second timing signal, the at least one stage is capable of substantially turning off at least one of the first CMOS transistor and the second CMOS transistor for substantially reducing leakage currents flowing through at least one of the first CMOS transistor and the second CMOS transistor.
Public/Granted literature
- US20100253418A1 CHARGE PUMP CIRCUITS, SYSTEMS, AND OPERATIONAL METHODS THEREOF Public/Granted day:2010-10-07
Information query
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