Invention Grant
- Patent Title: Multi-layer gallium arsenide-based fresnel phase-shift device for infrared wavelength conversion
- Patent Title (中): 用于红外波长转换的多层砷化镓基菲涅耳移相器件
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Application No.: US12511101Application Date: 2009-07-29
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Publication No.: US08154792B1Publication Date: 2012-04-10
- Inventor: David Weyburne , David Bliss , Candace Lynch
- Applicant: David Weyburne , David Bliss , Candace Lynch
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Air Force
- Current Assignee: The United States of America as represented by the Secretary of the Air Force
- Current Assignee Address: US DC Washington
- Agency: AFMCLO/JAZ
- Agent Fredric Sinder
- Main IPC: G02F1/335
- IPC: G02F1/335 ; H01L33/00
Abstract:
A new nonlinear optical structure for frequency conversion is described. The new nonlinear optical structure is a multilayer wafer comprising alternating layers of gallium arsenide and aluminum gallium arsenide onto a gallium arsenide substrate. The new device is both more efficient and easier to make than prior art gallium arsenide crystal structures designed for nonlinear optical conversion.
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