Invention Grant
US08154828B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device
有权
CPP型结构和磁盘装置中的磁阻效应元件
- Patent Title: Magnetoresistive effect element in CPP-type structure and magnetic disk device
- Patent Title (中): CPP型结构和磁盘装置中的磁阻效应元件
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Application No.: US12500835Application Date: 2009-07-10
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Publication No.: US08154828B2Publication Date: 2012-04-10
- Inventor: Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
- Applicant: Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
Public/Granted literature
- US20110007420A1 MAGNETORESISTIVE EFFECT ELEMENT IN CPP-TYPE STRUCTURE AND MAGNETIC DISK DEVICE Public/Granted day:2011-01-13
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